Fabrication of solder balls with injection molded solder

ABSTRACT

Wafers include multiple bulk redistribution layers. A terminal contact pad is on a surface of one of the bulk redistribution layers. A final redistribution layer is formed on the surface and in contact with the terminal contact pad. The final redistribution layer is formed from a material other than a material of the plurality of bulk redistribution layers. A solder ball is formed on the terminal contact pad.

BACKGROUND Technical Field

The present invention generally relates to the formation of solder ballson a wafer and, more particularly, to the formation of such solder ballsusing injection molding.

Description of the Related Art

As fabrication processes reach density limits in the fabrication oftwo-dimensional (2D) integrated circuits, three dimensional (3D) andtwo-and-a-half dimensional (2.5D) packaging processes are gainingtraction due to their ability to provide high bandwidth and shorttransmission lengths between devices. 2.5D packaging processes stackmultiple layers of 2D circuits, each having their components arrayed ina single horizontal plane. An intermediary layer provides verticalinterconnects between the vertically stacked device layers. True 3Dpackages, meanwhile, have one die stacked directly on top of anotherdie, with through-silicon vias providing communications betweencomponents at different vertical levels.

In each case, dies are mounted to one another with electricalinterconnections. This may be accomplished by forming solder bumps onthe surface of one or more of the dies to be bonded prior to thebonding. One die is then positioned over the other (e.g., in a“flip-chip” process) and the solder is reflowed, creating theappropriate electrical connections.

However, the joining pitch and bump size need to be very fine for 3D and2.5D packages compared to conventional flip-chip bonding. This resultsin a challenging fabrication process that sometimes results in joinfailures due to stress concentration at the joining area and at thejoining interface, as well as electromigration failures due to highcurrent densities.

One form of packaging is wafer-level packaging, which packages anintegrated circuit while the chip is still part of the wafer. After thepackages have been formed, they may be separated from one another bycutting the wafer. In such a process, the interconnections and solderbumps are formed for many chips all at once.

Existing processes for forming solder balls include screen printing,where a reusable metal mask is placed on a die before solder is printedon, and solder ball dropping, where pre-formed solder balls arephysically positioned in the reusable mask. Another approach useselectroplating or electroless plating to form solder on an exposed seedmetal over contact pads for the die. In the case of screen printing andsolder ball drop processes, there is a risk of void creation as fluxmaterial becomes a gas during solder reflow. Pre-forming solder ballsalso adds significant additional expense and, furthermore, the solderballs are often incompletely distributed. Solder plating, meanwhile, canbe too time consuming to be practical for large-scale fabrication.

SUMMARY

A wafer includes multiple bulk redistribution layers. A terminal contactpad is on a surface of one of the bulk redistribution layers. A finalredistribution layer is formed on the surface and in contact with theterminal contact pad. The final redistribution layer is formed from amaterial other than a material of the plurality of bulk redistributionlayers. A solder ball is formed on the terminal contact pad.

A wafer includes multiple bulk redistribution layers. A set of terminalcontact pads are on a surface of one of the bulk redistribution layers.A final redistribution layer is formed on the surface and in contactwith the terminal contact pads, the final redistribution layer havingholes directly over the terminal contact pads. The final redistributionlayer is formed from a material other than a material of the bulkredistribution layers. A set of solder balls is formed on respectiveterminal contact pads.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 is a cross-sectional diagram of a step in the formation of solderballs on a wafer in accordance with the present embodiments;

FIG. 2 is a cross-sectional diagram of a step in the formation of solderballs on a wafer in accordance with the present embodiments;

FIG. 3 is a cross-sectional diagram of a step in the formation of solderballs on a wafer in accordance with the present embodiments;

FIG. 4 is a cross-sectional diagram of a step in the formation of solderballs on a wafer in accordance with the present embodiments;

FIG. 5 is a cross-sectional diagram of a step in the formation of solderballs on a wafer in accordance with the present embodiments;

FIG. 6 is a cross-sectional diagram of an alternative step in theformation of solder balls on a wafer in accordance with the presentembodiments;

FIG. 7 is a cross-sectional diagram of an alternative step in theformation of solder balls on a wafer in accordance with the presentembodiments;

FIG. 8 is a cross-sectional diagram of an alternative step in theformation of solder balls on a wafer in accordance with the presentembodiments;

FIG. 9 is a block/flow diagram of a method of forming solder balls on awafer in accordance with the present embodiments; and

FIG. 10 is a block/flow diagram of a method of forming solder balls on awafer in accordance with the present embodiments.

DETAILED DESCRIPTION

Embodiments of the present invention make use of injection molding toprovide solder material to a wafer. To accomplish this, materials areused in wafer fabrication that are resistant to high pressure andtemperature, so that those materials are able to withstand directcontact with the injection head. In one embodiment, the last dielectriclayer of the die is made particularly thick to provide a mold for theinjected solder at the contact pads of the die. In another embodiment, amold resist is provided which is patterned along with the lastdielectric layer of the die to expose the contact pads. In all of thepresent embodiments, an injection head is then provided in physicalcontact with the molds and solder is injected into each. The molds arethen etched back and the injected solder is reflowed to form solderballs suitable for flip-chip bonding or package joining to the printedcircuit board.

Referring now to FIG. 1, a cross-sectional view of a step in theformation of solder balls on a die is shown. A die is formed withredistribution layer (RDL) 102/106. The redistribution layer 102/106includes multiple dielectric layers, each of which may include devices,conductive interconnects, vias, terminal pads, and other features. Inthe present embodiments the bulk of the die is abstractly shown as RDLbulk 102, which may itself include multiple different dielectric layersand components. A set of terminal contact pads 104 are formed on the RDLbulk 102, providing electrical access to the devices formed in and onthe RDL bulk.

In general, the RDL bulk 102 is formed by coating dielectric material ona wafer that has a terminal pad opening, patterning interconnection viasand metal wiring in the dielectric pad using lithographic processes,plating conductive metal (e.g., copper, silver, gold, etc.), andrepeating for each layer of the RDL bulk 102. Exemplary materials thatmay be used in the layers of the RDL bulk 102 include polymide,polybenzoxazoles, and benzocyclobutanes. After the appropriate number ofwiring layers are fabricated, with contact pads 104 exposed, the lastRDL 106 is formed and a pad opening is fabricated.

A final RDL 106 is formed over the terminal contact pads 104 and the RDLbulk 102. The final RDL 106 in this embodiment is formed with athickness significantly greater than the final RDL of conventionalprocesses. In the present embodiments, the final RDL 106 may be formedfrom, for example, a photosensitive phenolic resin or polymide materialthat can withstand high temperatures and pressures. Exemplarytemperatures and pressures that the final RDL 106 will be subjected torange from, e.g., about 140° C. to about 300° C. and from about 0.01 MPato about 0.2 MPa. While it is specifically contemplated that the finalRDL 106 is formed from a material different from the material of the RDLbulk 102, the layers may be formed from the same material if the RDLbulk 102 is formed from a material that meets the temperature andpressure needs of the final RDL 106. The final RDL 106 may be spun on ordeposited by any other appropriate deposition process, including, e.g.,chemical vapor deposition (CVD), physical vapor deposition (PVD), atomiclayer deposition (ALD), or gas cluster ion beam (GCIB) deposition.

Spin coating includes deposition of the last RDL material in liquidform. The die is then spun to evenly distribute the material, with anamount of RDL applied corresponding to a thickness of the final RDL 106.CVD is a deposition process in which a deposited species is formed as aresult of chemical reaction between gaseous reactants at greater thanroom temperature (e.g., from about 25° C. about 900° C.). The solidproduct of the reaction is deposited on the surface on which a film,coating, or layer of the solid product is to be formed. Variations ofCVD processes include, but are not limited to, Atmospheric Pressure CVD(APCVD), Low Pressure CVD (LPCVD), Plasma Enhanced CVD (PECVD), andMetal-Organic CVD (MOCVD) and combinations thereof may also be employed.In alternative embodiments that use PVD, a sputtering apparatus mayinclude direct-current diode systems, radio frequency sputtering,magnetron sputtering, or ionized metal plasma sputtering. In alternativeembodiments that use ALD, chemical precursors react with the surface ofa material one at a time to deposit a thin film on the surface. Inalternative embodiments that use GCIB deposition, a high-pressure gas isallowed to expand in a vacuum, subsequently condensing into clusters.The clusters can be ionized and directed onto a surface, providing ahighly anisotropic deposition.

The thickness of the final RDL 106 is selected to be as thick as isneeded to provide sufficient solder volume for a solder ball of anappropriate diameter. In one example, the thickness of the final RDL 106may be approximately 50 μm to form solder balls having a diameter ofapproximately 90 μm.

Referring now to FIG. 2, a cross-sectional view of a step in theformation of solder balls on a die is shown. The final RDL 106 ispatterned and etched to expose the underlying terminal contact pads 104.Specifically, the pattern may be produced by masking the last RDL 106and exposing the last RDL 106 to a pattern of radiation. The pattern maythen be developed into the last RDL 106 utilizing a resist developer.Once the patterning of the last RDL 106 is completed, the sectionscovered by the mask are removed, while the exposed regions are protectedusing a selective etching process that removes the protected regions. Itis specifically contemplated that a wet or dry chemical etch may be usedto remove material from the last RDL 106, but any appropriate etchingprocess, including anisotropic etching processes such as reactive ionetching (RIE), may be used instead. The etched RDL 106 includes holes202 over the terminal contact pads 104. After etching, the final RDL 106is baked to make the material non-strippable before solder injection.

RIE is a form of plasma etching in which during etching the surface tobe etched is placed on a radio-frequency powered electrode. During RIE,the surface to be etched takes on a potential that accelerates theetching species extracted from plasma toward the surface, in which thechemical etching reaction is taking place in the direction normal to thesurface. Other examples of anisotropic etching that can be used at thispoint of the present invention include ion beam etching, plasma etchingor laser ablation.

Referring now to FIG. 3, a cross-sectional view of a step in theformation of solder balls on a die is shown. An injection head 304 ismoved in contact with the last RDL 106 and injects solder 302 into eachof the holes 202. After one hole 202 has been filled, the injection head304 moves in contact with the surface of the last RDL 106. The last RDL106 has sufficient strength to remain intact without being damaged bythe movement of the injection head 304, even at the high temperaturesneeded to keep the solder fluid for injection. It is specificallycontemplated that the solder injection may be performed under vacuum,thereby preventing the creating of air gaps in the deposited solder.

In one specific embodiment, the solder may have a composition of about0.5% copper, about 96.5% tin, and about 3% silver, but it should beunderstood that other solder compositions may be used with appropriatetemperatures and pressures. In this specific example, a temperature ofabout 250° C. and an injection head pressure of about 0.02 MPa to about0.15 MPa is used. Alternative solder compositions that are specificallycontemplated include about 90% tin and about 10% antimony, with amelting temperature of about 266° C., and about 42% tin to about 58%bismuth, with a melting temperature of about 138° C. The abovepercentages are described in terms of weight percentage.

Referring now to FIG. 4, a cross-sectional view of a step in theformation of solder balls on a die is shown. The last RDL 106 is etchedback. It is specifically contemplated that a plasma etch (using, e.g.,an O₂, CF₄, N₂ or other plasma) may be used to remove material from thelast RDL 106 to produce etched layer 402. The depth of the etch isselected to leave the solder fills 302 at an appropriate height abovethe etched layer 402.

Referring now to FIG. 5, a cross-sectional view of a step in theformation of solder balls on a die is shown. After a flux material hasbeen coated on the die, for example by spraying the flux material or byany other deposition process, a reflow process heats the die to atemperature above the melting point of the solder, causing the exposedsolder posts 302 to melt. Under its own surface tension, the liquidsolder material forms a spherical shape. These solder balls 502 aresuitable for bonding to other wafers to form 2.5D or 3D chip packages.In the specific embodiment of using the tin-silver-copper soldercomposition, the reflow temperature may be about 260° C. In general,reflow peak temperature is about 35° C. to about 40° C. above the soldermelting point.

Referring now to FIG. 6, a cross-sectional view of a step in analternative embodiment of the formation of solder balls on a die isshown. In this embodiment, rather than using a thick final RDL 106, thefinal RDL 602 is relatively thin. An additional resist layer 604 is thendeposited over the final RDL 602 using, e.g., a spin-on process. In thisembodiment, the thin final RDL 602 is a standard RDL dielectricmaterial, which need not have as a high tolerance for temperature andpressure as the resist layer 604. As noted above, the thickness of theresist layer 604, combined with the thickness of the thin final RDL 602is determined according to a size of the solder ball to be produced. Inthis embodiment, the resist layer 604 may be formed from the samematerials described above with respect to the thick final RDL 106, butwithout being completely baked in place.

Referring now to FIG. 7, a cross-sectional view of a step in analternative embodiment of the formation of solder balls on a die isshown. As in the embodiment shown in FIG. 2, a mask is applied topattern both the resist layer 604 and the thin final RDL 602, formingholes 702 that expose the terminal contact pads 104.

Referring now to FIG. 8, a cross-sectional view of a step in analternative embodiment of the formation of solder balls on a die isshown. The injection nozzle 304 is brought into contact with the etchedresist layer 604 and injects solder 802 into the holes 702. As notedabove, this process is performed under vacuum to prevent air holes fromforming in the injected solder 802. The injection nozzle 304 ismaneuvered in contact with the resist layer 604, and the material of theresist layer 604 is selected to withstand the pressure of the nozzle 304and its high temperature. This process continues until all of the holes702 are filled.

After the solder has been injected and solidifies, the resist layer 604is removed. The resulting die resembles that of FIG. 4, before thereflow process. In this embodiment, the etch of the final RDL 602 toexpose the terminal contact pads 104 is performed with a resist materialthat is suitable for the injection molding process, thereby saving amasking and etching step.

It is to be understood that aspects of the present invention will bedescribed in terms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps can be varied within the scope of aspects of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment”,as well as other variations thereof, means that a particular feature,structure, characteristic, and so forth described in connection with theembodiment is included in at least one embodiment. Thus, the appearancesof the phrase “in one embodiment” or “in an embodiment”, as well anyother variations, appearing in various places throughout thespecification are not necessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein s for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when used,herein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIG. 1. It will be understood thatthe spatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term. “below” can encompass both an orientationof above below. The device can be otherwise oriented (rotated 90 degreesor at other orientations), and the spatially relative descriptors usedherein can be interpreted accordingly. In addition, it will also beunderstood that when a layer is referred to as being “between” twolayers, it can be the only layer between the two layers, or one or moreintervening layers cat also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Referring now to FIG. 9, a method of forming solder balls is shown.Block 902 forms a thick final RDL 106 over the terminal contact pads104. It is specifically contemplated that this may be performed by aspin-on process, though it should be understood that any appropriatedeposition process may be used instead. Block 904 then etches holes 202in the thick final RDL 106 to expose the terminal contact pads 104. Anyappropriate process may be used to pattern the holes. It is specificallycontemplated that photolithographic techniques may be used to patternthe material, followed by an appropriate wet or dry etch, butanisotropic etches such as a reactive ion etch (RIE) may be usedinstead.

Block 906 injects solder 302 into the holes 202. In one specificallycontemplated embodiment, the solder 302 is injected directly into theholes 202 using an injection nozzle 304 that is in physical contact withthe final RDL 106. Once the solder 302 has been injected, block 908etches back the thick final RDL 106 to expose the sides of thesolidified solder 302. Block 910 heats the solder 302 to cause thematerial to reflow. The solder material's own surface tension formssolder balls 502.

Referring now to FIG. 10, a method of forming solder balls is shown.Block 1002 forms a thin final RDL 602 over the terminal contact pads104. As above, it is specifically contemplated that the thin final RDL602 may be performed by a spin-on process, though any appropriatedeposition process may be used instead. Block 1004 forms a resist layer604 over the thin final RDL 602, again using a spin-on process or anyother appropriate deposition process. Block 904 etches holes 702 intoboth the thin final RDL 602 and the resist layer 604 top expose theterminal contact pads 104. The etch in this case is performed using,e.g., a photolithographic mask and any appropriate etch.

Block 1008 injects solder 802 into the holes 702. As above, the solder802 is injected directly into the holes 702 using an injection nozzle304 that is in physical contact with the resist layer 604. Once thesolder 802 has been injected, block 1010 strips away the resist layer604 to expose the sides of the solidified solder 802. Block 1012 heatsthe solder 802 to cause the material to reflow. The solder material'sown surface tension forms solder balls 502.

Having described preferred embodiments of the fabrication of solderballs with injection molded solder (which are intended to beillustrative and not limiting), it is noted that modifications andvariations can be made by persons skilled in the art in light of theabove teachings. It is therefore to be understood that changes may bemade in the particular embodiments disclosed which are within the scopeof the invention as outlined by the appended claims. Having thusdescribed aspects of the invention, with the details and particularityrequired by the patent laws, what is claimed and desired protected byLetters Patent is set forth in the appended claims.

1. A wafer, comprising: a plurality of bulk redistribution layers; aterminal contact pad on a surface of one of the bulk redistributionlayers; a final redistribution layer formed on the surface and incontact with the terminal contact pad, wherein the final redistributionlayer is formed from a material other than a material of the pluralityof bulk redistribution layers; and a solder ball formed directly on theterminal contact pad comprising a pedestal portion formed to a sameheight as the final redistribution layer and a ball portion above thepedestal portion.
 2. The wafer of claim 1, wherein the finalredistribution layer is formed from a material selected from the groupconsisting of a photosensitive phenolic resin and a polymide material.3. The wafer of claim 1, wherein the wafer comprises a plurality ofterminal contact pads on the surface and a plurality of solder ballsformed on respective terminal contact pads.
 4. The wafer of claim 1,wherein the final redistribution layer comprises a hole formed directlyover the terminal contact pads.
 5. The wafer of claim 1, wherein a topsurface of the final redistribution layer has a height that is lowerthan a height of a top of the solder ball.
 6. The wafer of claim 1,wherein a top surface of the final redistribution layer has a heightthat is greater than a height of a top surface of the contact pad. 7.The wafer of claim 1, wherein the plurality of bulk redistributionlayers are formed from one or more of the materials selected from thegroup consisting of a polymide material, a polybenzoxazole material, anda benocyclobutane material.
 8. The wafer of claim 1, wherein the solderball has a composition of about 0.5% copper, about 96.5% tin, and about3% silver.
 9. The wafer of claim 1, wherein the solder ball has adiameter of about 90 μm.
 10. (canceled)
 11. The wafer of claim 1,wherein the ball portion of the solder ball extends laterally above thefinal redistribution layer.
 12. A wafer, comprising: a plurality of bulkredistribution layers; a plurality of terminal contact pads on a surfaceof one of the bulk redistribution layers; a final redistribution layerformed on the surface and in contact with the terminal contact pads, thefinal redistribution layer having holes directly over the terminalcontact pads, wherein the final redistribution layer is formed from amaterial other than a material of the plurality of bulk redistributionlayers; and a plurality of solder balls formed directly on respectiveterminal contact pads, each solder ball comprising a pedestal portionformed to a same height as the final redistribution layer and a ballportion above the pedestal portion.
 13. The wafer of claim 12, whereinthe final redistribution layer is formed from a material selected fromthe group consisting of a photosensitive phenolic resin and a polymidematerial.
 14. The wafer of claim 12, wherein a top surface of the finalredistribution layer has a height that is lower than a height of a topof the solder ball.
 15. The wafer of claim 12, wherein a top surface ofthe final redistribution layer has a height that is greater than aheight of a top surface of the contact pad.
 16. The wafer of claim 12,wherein the plurality of bulk redistribution layers are formed from oneor more of the materials selected from the group consisting of apolymide material, a polybenzoxazole material, and a benocyclobutanematerial.
 17. The wafer of claim 12, wherein the solder ball has acomposition of about 0.5% copper, about 96.5% tin, and about 3% silver.18. The wafer of claim 12, wherein the solder ball has a diameter ofabout 90 μm.
 19. (canceled)
 20. The wafer of claim 12, wherein the ballportion of the solder ball extends laterally above the finalredistribution layer.
 21. A wafer, comprising: a plurality of bulkredistribution layers; a terminal contact pad on a surface of one of thebulk redistribution layers; a final redistribution layer formed on thesurface and in contact with the terminal contact pad, wherein the finalredistribution layer is formed from a phenolic resin and is formed froma material other than a material of the plurality of bulk redistributionlayers; and a solder ball formed directly on the terminal contact pad.22. The wafer of claim 21, wherein the phenolic resin is aphotosensitive phenolic resin.